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PDF AOU452 Data sheet ( Hoja de datos )
| Número de pieza | AOU452 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOU452
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU452 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU452 is Pb-free (meets ROHS & Sony
259 specifications). AOU452L is a Green Product
ordering option. AOU452 and AOU452L are
electrically identical.
TO-251
Features
VDS (V) =25V
ID = 55 A (VGS = 10V)
RDS(ON) < 9 mΩ (VGS = 10V)
RDS(ON) < 15 mΩ (VGS = 4.5V)
D
Top View
Drain Connected
to Tab
G DS
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
25
±20
55
40
100
30
135
50
25
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
39
2.5
Max
50
3
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AOU452
TwYwPwI.CDAatLaSEhLeEetC4UT.RcoICmAL AND THERMAL CHARACTERISTICS
60 60
50
40
tA
=
L ⋅ ID
BV − VDD
50
40
30 30
20
10 TA=25°C
20
10
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOU452.PDF ] | |
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