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PDF AOU448 Data sheet ( Hoja de datos )
| Número de pieza | AOU448 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOU448
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU448 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU448 is Pb-free (meets ROHS & Sony
259 specifications). AOU448L is a Green Product
ordering option. AOU448 and AOU448L are
electrically identical.
TO-251
Top View
Drain Connected
to Tab
Features
VDS (V) = 30V
ID = 75A
RDS(ON) < 5.6mΩ (VGS = 10V)
RDS(ON) < 9mΩ (VGS = 4.5V)
D
G
S
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
75
56
200
30
45
50
25
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Steady-State
Steady-State
Symbol
RθJC
Typ
44
2
Max
55
3
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AOU448
TwYwPwI.CDAatLaSEhLeEetC4UT.RcoICmAL AND THERMAL CHARACTERISTICS
100
80
tA
=
L ⋅ ID
BV − VDD
60
40
20 TA=25°C
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
100
75
50
25
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOU448.PDF ] | |
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