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PDF MSAFA75N10C Data sheet ( Hoja de datos )

Número de pieza MSAFA75N10C
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Microsemi Corporation 
Logotipo Microsemi Corporation Logotipo



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www.DataSheet4U.coSmA N T A A N A D I V I S I O N
MSAFA75N10C
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT PREVIEW
DESCRIPTION
New generation N-channel enhancement mode power MOSFET with
rugged polysilicon gate structure and fast switching intrinsic rectifier. The
very rugged Coolpack2TM surface-mount package is lightweight, space
saving and hermetically sealed for high reliability and/or military/space
application.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Ultrafast body diode
Increased Unclamped
Inductive Switching (UIS)
capability
Hermetically sealed, surface
mount power package
Very low package inductance
Very low thermal resistance
Reverse polarity available
upon request
APPLICATIONS/BENEFITS
DC-DC converters
Motor controls
Uninterruptible Power
Supply(UPS)
DC choppers
Synchronous rectification
Inverters
MAXIMUM RATINGS @ 25°C (unless otherwise specified)
Description
Symbol
Drain-to-Source Voltage (Gate Shorted to Source)
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Peak Drain Current, pulse width limited by TJmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy (3)
Total Power Dissipation @Tc=25°C
Junction Temperature Range
Tj= 25°C
Tj= 100°C
VDSS
VGS
VGSM
ID25
ID100
IDM
IAR
EAR
EAS
PD
Tj
Storage Temperature Range
Tstg
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
IS
ISM
θJC
Max.
100
+/-30
+/-40
75
60
300
75
30
1500
540
-55 to
+150
-55 to
+150
75
300
0.23
Unit
Volts
Volts
Volts
Amps
Amps
Amps
mJ
mJ
Watts
°C
°C
Amps
Amps
°C/W
Copyright 2000
MSC1594.PDF 2000-09-20
Microsemi
Santa Ana Division
2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
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