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Teilenummer | AP02N60I |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 6 Seiten www.DataSheet4U.com
Advanced Power
Electronics Corp.
AP02N60I
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Repetitive Avalanche Rated
▼ Fast Switching
▼ Simple Drive Requirement
G
D
Description
S
The TO-220CFM package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,AC-DC converters and high current high speed switching
circuits.
BVDSS
RDS(ON)
ID
600V
8Ω
2A
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
600
± 30
2
1.26
3.6
22
0.176
80
2
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Max.
Max.
Value
5.7
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200117032
www.DataSheet4U.com
AP02N60I
RD
D
VDS
TO THE
OSCILLOSCOPE
RG G
0.5x RATED VDS
+
10 V
-
S
VGS
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VDS
D
TO THE
OSCILLOSCOPE
0.8 x RATED VDS
G
S VGS
+
1~ 3 mA
-
II
GD
VG
10V
QGS
QG
QGD
Charge
Q
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ AP02N60I Schematic.PDF ] |
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