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Número de pieza | AP02N60I | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
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Advanced Power
Electronics Corp.
AP02N60I
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Repetitive Avalanche Rated
▼ Fast Switching
▼ Simple Drive Requirement
G
D
Description
S
The TO-220CFM package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,AC-DC converters and high current high speed switching
circuits.
BVDSS
RDS(ON)
ID
600V
8Ω
2A
G
DS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
600
± 30
2
1.26
3.6
22
0.176
80
2
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Max.
Max.
Value
5.7
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200117032
1 page www.DataSheet4U.com
AP02N60I
16
I D =2A
14
12
10
V DS =320V
V DS =400V
V DS =480V
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
100
Coss
Crss
10
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j = 150 o C
T j = 25 o C
1
0.1
0
0.2 0.4 0.6 0.8
1
V SD (V)
1.2 1.4 1.6
Fig 11. Forward Characteristic of
Reverse Diode
5
4
3
2
1
0
-50 0
50 100 150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AP02N60I.PDF ] |
Número de pieza | Descripción | Fabricantes |
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AP02N60H-H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP02N60H-H-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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