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AP02N60H Schematic ( PDF Datasheet ) - Advanced Power Electronics

Teilenummer AP02N60H
Beschreibung N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Hersteller Advanced Power Electronics
Logo Advanced Power Electronics Logo 




Gesamt 4 Seiten
AP02N60H Datasheet, Funktion
www.DataSheet4U.com
Advanced Power
Electronics Corp.
AP02N60H/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirement
RoHS Compliant
G
D
S
Description
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for AC/DC converters.
The through-hole version (AP02N60J) is available for low-profile
applications.
BVDSS
RDS(ON)
ID
600V
8Ω
1.6A
G D S TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Data & specifications subject to change without notice
Rating
600
±30
1.6
1
6
39
0.31
64
1.6
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Max.
Max.
Value
3.2
110
Units
/W
/W
200705051-1/4





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