|
|
PDF K07N120 Data sheet ( Hoja de datos )
| Número de pieza | K07N120 | |
| Descripción | Fast IGBT in NPT-technology | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K07N120 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
SKW07N120
www.DataSheet4U.com
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• Lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3-1
(TO-247AC)
Type
SKW07N120
VCE
1200V
IC
8A
Eoff
0.7mJ
Tj
150°C
Marking Package
K07N120 PG-TO-247-3-21
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Ts
Value
1200
16.5
7.9
27
27
Unit
V
A
13
7
27
±20
10
125
-55...+150
260
V
µs
W
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2_1 Apr 06
1 page  
www.DataSheet4U.com
25A
SKW07N120
25A
20A
VGE=17V
15A 15V
13V
11V
9V
10A 7V
20A
VGE=17V
15V
15A 13V
11V
9V
10A 7V
5A 5A
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
25A
20A
15A
TJ=+150°C
TJ=+25°C
10A TJ=-40°C
5A
0A
3V 5V 7V 9V 11V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
6V
IC=16A
5V
4V IC=8A
3V IC=4A
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2_1 Apr 06
5 Page 
www.DataSheet4U.com
PG-TO247-3-21
SKW07N120
Power Semiconductors
11
Rev. 2_1 Apr 06
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet K07N120.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K07N120 | Fast IGBT in NPT-technology | Infineon Technologies |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |