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Número de pieza | T2526 | |
Descripción | Low-voltage IR Receiver ASSP | |
Fabricantes | ATMEL Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de T2526 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! Features
• No Ewxtwewrn.DaaltCaSohmeepto4Un.ecnomts Except PIN Diode
• Supply-voltage Range: 2.7V to 5.5V
• Highest Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong
Signal Adaption (ATC)
• Automatic Supply Voltage Adaptation
• Highest Immunity against Disturbances from Daylight and Lamps
• Available for Carrier Frequencies between 30 kHz to 76 kHz; adjusted by Zener-Diode
Fusing ±2.5%
• TTL and CMOS Compatible
Applications
• Home Entertainment Applications (Audio/Video)
• Home Appliances
• Remote Control Equipment
1. Description
The IC T2526 is a complete IR receiver for data communication developed and opti-
mized for use in carrier-frequency-modulated transmission applications. The IC offers
highest sensitivity as well as highest suppression of noise from daylight and lamps.
The T2526 is available with broadest range of frequencies (30, 33, 36, 37, 38, 40, 44,
56, 76 kHz) and 5 different noise suppression regulation types (standard, lamp, noise,
short burst, data rate) covering requirements of high-end remote control solutions
(please refer to selection guide available for T2525/T2526). The T2526 operates in a
supply voltage range of 2.7V to 5.5V.
The function of the T2526 can be described using the block diagram of Figure 1-1 on
page 2. The input stage meets two main functions. First it provides a suitable bias
voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed
into a voltage by a special circuit which is optimized for low noise applications. After
amplification by a Controlled Gain Amplifier (CGA) the signals have to pass a tuned
integrated narrow bandpass filter with a center frequency f0 which is equivalent to the
chosen carrier frequency of the input signal The demodulator is used first to convert
the input burst signal to a digital envelope output pulse and to evaluate the signal
information quality, i.e., unwanted pulses will be suppressed at the output pin. All this
is done by means of an integrated dynamic feedback circuit which varies the gain as a
function of the present environmental conditions (ambient light, modulated lamps
etc.). Other special features are used to adapt to the current application to secure best
transmission quality.
Low-voltage
IR Receiver
ASSP
T2526
4597G–AUTO–10/06
1 page T2526
5. Electrical Characteristics, 3-V Operation (Continued)
Tamb = 2w5w°Cw.,DVaSta=Sh3eVetu4nUl.ecsosmotherwise specified.
No. Parameters
Test Conditions
Pin Symbol Min. Typ. Max. Unit Type*
4 Controlled Amplifier and Filter
4.1
Maximum value of
variable gain (CGA)
GVARMAX
51
dB D
4.2
Minimum value of variable
gain (CGA)
GVARMIN -5 dB D
4.3
Total internal
amplification(3)
GMAX
71 dB D
4.4
Center frequency fusing
accuracy of bandpass
VS = 3V, Tamb = 25°C
f03V_FUSE
–2.5
f0 +2.5 %
A
4.5
Overall accuracy center
frequency of bandpass
f03V
–5.5
f0
+3.5
%
C
4.6
Overall accuracy center
frequency of bandpass
Tamb = 0 to 70°C
f03V
–4.5
f0
+3.0
%
C
4.7 BPF bandwidth
–3 dB; f0 = 38 kHz;
See Figure 7-7 on page 9
B
3.8 kHz C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
6. Electrical Characteristics, 5-V Operation
Tamb = 25°C, VS = 5V unless otherwise specified.
No. Parameters
Test Conditions
Pin Symbol
Min.
Typ. Max. Unit Type*
5 Supply
5.1 Supply-voltage range
5.2 Supply current
6 Output
IIN =0
1
VS
4.5 5.0 5.5 V
C
1 IS 0.9 1.2 1.6 mA B
6.1
Internal pull-up
resistor(1)
Tamb = 25°C
See Figure 7-10 on page 10
1, 3
RPU
30/40
kΩ A
6.2 Output voltage low
R2 = 2.4 kΩ
See Figure 7-10 on page 10
3, 6
VOL
250 mV
B
6.3 Output voltage high
6.4
Output current
clamping
R2 = 0
See Figure 7-10 on page 10
3, 1
3, 6
VOH VS – 0.25
IOCL
8
Vs V
mA
B
B
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
4597G–AUTO–10/06
5
5 Page 8. Chip Dimensions
www.DataSheet4U.com
Figure 8-1. Chip Size in µm
GND
336,906
IN
783,887
VS
55,652
T2526
T2526
1210, 1040
scribe
55,62
OUT
0,0
Fusing
width
Note: Pad coordinates are given for lower left corner of the pad in µm from the origin 0,0
Dimensions
Pad metallurgy
Finish
Length inclusive scribe
Width inclusive scribe
Thickness
Pads
Fusing pads
Material
Thickness
Material
Thickness
1.16 mm
1.37 mm
290 µ ± 5%
90 µ × 90 µ
70 µ × 70 µ
AlCu/AlSiTi(1)
0.8 µm
Si3N4/SiO2
0.7/0.3 µm
Note: 1. Value depends on manufacture location.
4597G–AUTO–10/06
11
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet T2526.PDF ] |
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