K50T60T Datasheet PDF - Infineon Technologies
| Part Number | K50T60T | |
| Description | IKW50N60T | |
| Manufacturers | Infineon Technologies | |
| Logo |  |
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TrenchStop Series
IKW50N60T
q
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
P-TO-247-3-1
(TO-220AC)
C
E
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
IKW50N60T 600V 50A
1.5V
175°C
K50T60
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package Ordering Code
TO-247 Q67040S4718
Value
600
801)
50
150
150
100
50
150
±20
5
333
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1) Value limited by bond wire
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.1 Dec-04
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TrenchStop Series
IKW50N60T
q
120A
100A VGE=20V
15V
80A
13V
11V
60A 9V
7V
40A
20A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
120A
100A VGE=20V
15V
80A
13V
11V
60A
40A
9V
7V
20A
0A
0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
80A
60A
40A
20A
TJ=175°C
25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
2.5V
2.0V
1.5V
1.0V
IC=100A
IC=50A
IC=25A
0.5V
0.0V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.1 Dec-04
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K50T60T electronic component. |
| Information | Total 13 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view |  1. - 50A, 600V, Transistor (IKW50N60T) [ Learn More ] | |
| Download | [ K50T60T.PDF Datasheet ] | |
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