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PDF AP3310J Data sheet ( Hoja de datos )
| Número de pieza | AP3310J | |
| Descripción | P-CHANNEL ENHANCEMENT MODE | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP3310H/J
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ 2.5V Gate Drive Capability
D
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Description
G
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
This device is suited for low voltage and battery power
applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=100℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
BVDSS
RDS(ON)
ID
-20V
150mΩ
-10A
G D S TO-252(H)
G
D
S
TO-251(J)
Rating
- 20
± 12
-10
-6.2
-24
25
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Max.
Value
5.0
110
Unit
℃/W
℃/W
Data and specifications subject to change without notice
201225023
1 page  
5
I D =-2.8A
V DS =-6V
4
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3
2
1
0
0246
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
8
10
T j =150 o C
T j =25 o C
1
AP3310H/J
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1 3 5 7 9 11 13
-V DS (V)
Fig 10. Typical Capacitance Characteristics
1.5
1
0.5
0
0.3 0.5 0.7 0.9 1.1 1.3 1.5
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP3310J.PDF ] | |
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