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Teilenummer | 3310GH |
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Beschreibung | AP3310GH | |
Hersteller | Advanced Power Electronics | |
Logo | ||
Gesamt 8 Seiten Advanced Power
Electronics Corp.
AP3310GH/J
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ 2.5V Gate Drive Capability
www.DataSheet4▼U.cFomast Switching Characteristic
Description
G
D
S
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, low on-resistance and cost-
effectiveness.
This device is suited for low voltage and battery power applications.
BVDSS
RDS(ON)
ID
-20V
150mΩ
-10A
GD
S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100℃
IDM
PD@TC=25℃
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
G
D
S
TO-251(J)
Rating
- 20
+12
-10
-6.2
-24
25
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Value
5.0
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200808155
AP3310GH/J
www.DataSheet4U.com
RD
D
VDS
TO THE
OSCILLOSCOPE
RG G
0.3 x RATED VDS
-5 V
S
VGS
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
D
G
-1~-3mA
I
G
S
VDS
VGS
I
D
TO THE
OSCILLOSCOPE
0.3 x RATED VDS
VG
-5V
QGS
QG
QGD
Charge
Q
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
6
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ 3310GH Schematic.PDF ] |
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