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Teilenummer | STP08IE120F4 |
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Beschreibung | Emitter Switched Bipolar Transistor | |
Hersteller | STMicroelectronics | |
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Gesamt 11 Seiten STP08IE120F4
Emitter Switched Bipolar Transistor
ESBT® 1200 V - 8 A - 0.10 Ω
Preliminary Data
General features
VCS(ON)
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0.8 V
IC
8A
RCS(ON)
0.10 W
■ High voltage / high current Cascode
configuration
■ Low equivalent on resistance
■ very fast-switch up to 150 kHz
■ Squared RBSOA up to 1200V
■ Very low Ciss driven by RG = 47Ω
■ Very low turn-off cross over time
Applications
■ Aux SMPS for three phase mains
Description
The STP08IE120F4 is manufactured in Monolithic
ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage applica-
tions.
It is designed for use in Gate Driven based topolo-
gies.
TO220FP-4L
Internal schematic diagrams
Order codes
Part Number
Marking
STP08IE120F4
P08IE120F4
Package
TO220FP-4L
Packing
Tube
November 2006
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
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Electrical characteristics
STP08IE120F4
Figure 7. Reverse biased safe operting Figure 8. Gate threshold voltage vs
area
temperature
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Figure 9. Dynamic collector-emitter
saturation voltage
Figure 10. Inductive load switching time
Figure 11. Inductive load switching time
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6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ STP08IE120F4 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
STP08IE120F4 | Emitter Switched Bipolar Transistor | ST Microelectronics |
STP08IE120F4 | Emitter Switched Bipolar Transistor | STMicroelectronics |
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