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PDF GB15B60KD Data sheet ( Hoja de datos )
| Número de pieza | GB15B60KD | |
| Descripción | IRGB15B60KD | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GB15B60KD (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
www.DataSheet4U.com • Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Benefits
• Benchmark Efficiency for Motor Control.
C
G
E
n-channel
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
PD - 94383D
IRGB15B60KD
IRGS15B60KD
IRGSL15B60KD
VCES = 600V
IC = 15A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
D2Pak
TO-262
IRGB15B60KD IRGS15B60KD IRGSL15B60KD
Max.
600
31
15
62
62
31
15
64
± 20
208
83
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
0.6
2.1
–––
62
40
–––
Units
°C/W
g
1
8/18/04
1 page  
www.DataSheet4U.com
20
18
16
14
12 ICE = 5.0A
10 ICE = 15A
8 ICE = 30A
6
4
2
0
4 6 8 10 12 14 16 18 20
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
IRG/B/S/SL15B60KD
20
18
16
14
12 ICE = 5.0A
10 ICE = 15A
8 ICE = 30A
6
4
2
0
4 6 8 10 12 14 16 18 20
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
18
16
14
12 ICE = 5.0A
10 ICE = 15A
8 ICE = 30A
6
4
2
0
4 6 8 10 12 14 16 18 20
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
www.irf.com
160
140 TJ = 25°C
TJ = 150°C
120
100
80
60
40 TJ = 150°C
20
0
05
TJ = 25°C
10
VGE (V)
15
20
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5
5 Page 
www.DataSheet4U.com
600
500
tF
30
25
400
300
200
100
9 0 % IC E
5 % IC E
5% V CE
20
15
10
5
00
E o ff L o s s
-1 00
-0.5
0.0 0.5 1.0
t (µS )
-5
1.5
WF.1- Typ. Turn-off Loss
@ TJ = 150°C using CT.4
100
0
-100
-200
-300
Pe a k
IR R
QRR
tR R
20
10
10%
Pe ak
IR R
0
-1 0
-2 0
-400
-3 0
-500
-0.06
0.04
t (µS )
0.14
WF.3- Typ. Reverse Recovery
@ TJ = 150°C using CT.4
www.irf.com
-4 0
IRG/B/S/SL15B60KD
500 50
400 40
300
90% tes t current
30
200
100
tR
0
-100
-0. 2
20
test current
10% tes t current
5% VCE
10
Eon Los s
0
-0.1 0.0
t (µS)
-10
0.1
WF.2- Typ. Turn-on Loss
@ TJ = 150°C using Fig. CT.4
500 250
400
V CE
200
300
200
150
IC E
100
100 50
00
-1 0 0
-1 0
0 10 20
t (µS )
-5 0
30
WF.4- Typ. Short Circuit
@ TJ = 150°C using CT.3
11
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet GB15B60KD.PDF ] | |
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