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PDF STL65N3LLH5 Data sheet ( Hoja de datos )
| Número de pieza | STL65N3LLH5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL65N3LLH5
N-channel 30 V, 0.0048 Ω, 19 A - PowerFLAT™ (6x5)
STripFET™ V Power MOSFET
Features
www.DataSheet4U.com Type
STL65N3LLH5
VDSS
30 V
RDS(on)
max
<0.0058 Ω
ID
19 A (1)
1. The value is rated according Rthj-pcb
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This product utilizes the 5th generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available RDS(on)*Qg, in this chip scale
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
PowerFLAT™ ( 6x5 )
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STL65N3LLH5
Marking
65N3LLH5
Package
PowerFLAT™ (6x5)
Packaging
Tape and reel
September 2008
Rev 4
1/12
www.st.com
12
1 page  
STL65N3LLH5
Electrical characteristics
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Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=15 V, ID= 9.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13)
Min. Typ. Max. Unit
9.3 ns
14.5 ns
22.7 ns
4.5 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 19 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 19 A,
di/dt = 100 A/µs,
VDD=25 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
19 A
76 A
1.1 V
25 ns
17.5 nC
1.4 A
5/12
5 Page 
STL65N3LLH5
5 Revision history
Revision history
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Table 9. Document revision history
Date
Revision
Changes
04-Jan-2007
1 First release
01-Apr-2008
07-May-2008
23-Sep-2008
2 Document status promoted from preliminary data to datasheet.
3 Updated Figure 9: Capacitance variations
4 VGS value has been changed on Table 2 and Table 5
11/12
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| PDF Descargar | [ Datasheet STL65N3LLH5.PDF ] | |
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