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G4PC30KD Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer G4PC30KD
Beschreibung IRG4PC30KD
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 10 Seiten
G4PC30KD Datasheet, Funktion
PD -91587A
IRG4PC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
www.DataSheet4U.com VGE = 15V
Combines low conduction losses with high
switching speed
G
Tighter parameter distribution and higher efficiency
than previous generations
IGBT co-packaged with HEXFREDTM ultrafast,
E
n-channel
ultrasoft recovery antiparallel diodes
Benefits
Latest generation 4 IGBTs offer highest power density
motor controls possible
HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
This part replaces the IRGBC30KD2 and IRGBC30MD2
products
For hints see design tip 97003
Absolute Maximum Ratings
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
28
16
58
58
12
58
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
1.2
2.5
–––
40
–––
Units
°C/W
g (oz)
1
4/15/2000






G4PC30KD Datasheet, Funktion
IRG4PC30KD
5.0 RG = 2O3hm
T J = 150° C
VCC = 480V
4.0 VGE = 15V
www.DataSheet4U.com
3.0
2.0
1.0
0.0
0
8 16 24 32
I C , Collector-to-emitter Current (A)
40
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
100
VGE = 20V
T J = 112255°oCC
10
SAFE OPERATING AREA
1
1 10 100
VCE , Collector-to-Emitter Voltage (V)
1000
Fig. 12 - Turn-Off SOA
TJ = 15 0°C
10 TJ = 12 5°C
TJ = 2 5°C
1
0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com

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