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B1020A Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer B1020A
Beschreibung PNP Transistor - 2SB1020A
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 5 Seiten
B1020A Datasheet, Funktion
2SB1020A
TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power)
2SB1020A
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
Complementary to 2SD1415A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
100
100
5
7
10
0.7
2.0
30
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
5 k
150
Emitter
1 2006-11-21





SeitenGesamt 5 Seiten
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