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PDF SiHFP21N60L Data sheet ( Hoja de datos )
| Número de pieza | SiHFP21N60L | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay Siliconix | |
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IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
150
46
64
Single
0.27
www.DataSheet4U.com
D
TO-247
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simple Drive
Requirements
Available
RoHS*
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Lead (Pb)-free Available
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uniterruptible Power Supplies
• Motor Control Applications
TO-247
IRFP21N60LPbF
SiHFP21N60L-E3
IRFP21N60L
SiHFP21N60L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.9 mH, RG = 25 Ω, IAS = 21 A, dV/dt = 11 V/ns (see fig. 12a).
c. ISD ≤ 21 A, dI/dt ≤ 530 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
LIMIT
600
± 30
21
13
84
2.6
420
21
33
330
16
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91206
S-81273-Rev. B, 16-Jun-08
www.vishay.com
1
1 page  
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100µsec
1msec
www.DataSheet4U.com 1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
1
10
100
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area
25
20
15
10
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 11a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 11b - Switching Time Waveforms
5
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
P DM
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
t1
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
t2
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
Document Number: 91206
S-81273-Rev. B, 16-Jun-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SiHFP21N60L.PDF ] | |
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