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PDF SiHFB13N50A Data sheet ( Hoja de datos )
| Número de pieza | SiHFB13N50A | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay Siliconix | |
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IRFB13N50A, SiHFB13N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
81
20
36
Single
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D
TO-220
0.450
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Lower Gate Charge Qg Results in Simpler Drive
Reqirements
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supplies
• High Speed Power Switching
TO-220
IRFB13N50APbF
SiHFB13N50A-E3
IRFB13N50A
SiHFB13N50A
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 5.7 mH, RG = 25 Ω, IAS =14 A, dV/dt = 7.6 V/ns (see fig. 12a).
c. ISD ≤ 14 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91095
S-81393-Rev. A, 07-Jul-08
LIMIT
500
± 30
14
9.1
56
2.0
560
14
25
250
9.2
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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1
1 page  
IRFB13N50A, SiHFB13N50A
Vishay Siliconix
15
12
9
6
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3
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
0
25 50 75 100 125 150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D = t1 /t2
2. Peak TJ = PDM x ZthJC + TC
0.001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
15 V
VDS L
Driver
RG
20 V
tp
D.U.T.
IAS
0.01 Ω
+
- VDAD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91095
S-81393-Rev. A, 07-Jul-08
VDS
tp
IAS
Fig. 12b - Unclamped Inductive Waveforms
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5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SiHFB13N50A.PDF ] | |
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