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PDF AO4485 Data sheet ( Hoja de datos )
| Número de pieza | AO4485 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4485
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4485/L uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a DC-DC converter
www.DataSheet4aUp.cpolmication.
AO4485 and AO4485L are electrically identical.
-RoHS Compliant
-AO4485L is Halogen Free
Features
VDS (V) = -40V
ID = -10A
RDS(ON) < 15mΩ
RDS(ON) < 20mΩ
(VGS = -10V)
(VGS = -10V)
(VGS = -4.5V)
S
S
S
G
SOIC-8
D
D
D
D
D
G
S
Absolute Maximum Ratings TJ=25°C unless otherwise noted
Parameter
Symbol
10 Sec Steady State
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Avalanche Current G
Repetitive avalanche energy L=0.3mH G
ID
IDM
IAR
EAR
-12 -10
-9 -8
-120
-28
118
Power Dissipation A
TA=25°C
TA=70°C
PD
3.1 1.7
2.0 1.1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady State
Steady State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO4485.PDF ] | |
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