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Teilenummer | AO4466 |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | Alpha & Omega Semiconductors | |
Logo | ||
Gesamt 6 Seiten AO4466
30V N-Channel MOSFET
General Description
The AO4466 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
* RoHS and Halogen-Free Compliant
Product Summary
VDS (V) = 30V
ID = 10A
RDS(ON) < 23mΩ
RDS(ON) < 35mΩ
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
D
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation TA=70°C
Avalanche Current B, G
Repetitive avalanche energy 0.1mH B, G
PD
IAR
EAR
Junction and Storage Temperature Range TJ, TSTG
G
Maximum
30
±20
10
7
64
3.1
2
12
7
-55 to 150
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
36
62
18
Max
40
75
24
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
Rev.10.0: July 2013
www.aosmd.com
Page 1 of 6
AO4466
+
VDC
-
Vgs
Ig
Vds
Vgs
Rg
Vgs
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Res istive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
VDC Vdd
-
Vgs
t d(on) t r
t on
t d(off)
tf
t off
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L2
EAR= 1/2 LI AR
Vds
Vgs +
VDC Vdd
- Id
DUT
Vgs
Vds +
Vds -
Isd
Vgs
Ig
Diode Recovery Tes t Circuit & Waveforms
DUT
Qrr = - Idt
Vgs
L
Isd IF
trr
dI/dt
+
VDC Vdd
IRM
- Vds
BVDSS
IAR
Vdd
Rev.10.0: July 2013
www.aosmd.com
Page 6 of 6
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ AO4466 Schematic.PDF ] |
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