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Número de pieza | AO4419 | |
Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO4419 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! AO4419
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4419 uses advanced trench technology to
www.DataSheet4pUr.ocovmide excellent RDS(ON), and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4419 is Pb-free
(meets ROHS & Sony 259 specifications). AO4419L
is a Green Product ordering option. AO4419 and
AO4419L are electrically identical.
Features
VDS (V) = -30V
ID = -9.7 A (VGS = -10V)
RDS(ON) < 20mΩ (VGS = -10V)
RDS(ON) < 35mΩ (VGS = -4.5V)
SOIC-8
Top View
SD
SD
SD
GD
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-9.7
-8.1
-40
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
63
21
Max
40
75
30
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AO4419.PDF ] |
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