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PDF MRF6VP41KHR6 Data sheet ( Hoja de datos )
| Número de pieza | MRF6VP41KHR6 | |
| Descripción | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
‘Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for pulsed wideband applications with frequencies up to
450 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
•
Typical Pulsed Performance at
PoPuto=w1e0r 0G0aWin a—tts2P0edaBk, Pulse
W45i0dtMh H= z1:0V0DμDs=ec5,0DVuotyltsC,yIcDlQe
=
=
150 mA,
20%
Drain Efficiency — 64%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak
Power
Features
www.DataSheet4U••.coQInmuteaglirfaietdedUEpStoDaPMroatexcimtiounm of 50 VDD Operation
• Excellent Thermal Stability
• Designed for Push - Pull Operation
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Document Number: MRF6VP41KH
Rev. 0, 1/2008
MRF6VP41KHR6
MRF6VP41KHSR6
10 - 450 MHz, 1000 W, 50 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D - 05, STYLE 1
NI - 1230
MRF6VP41KHR6
CASE 375E - 04, STYLE 1
NI - 1230S
MRF6VP41KHSR6
PARTS ARE PUSH - PULL
Table 1. Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Rating
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Symbol
VDSS
VGS
Tstg
TC
TJ
Value
- 0.5, +110
- 6, +10
- 65 to +150
150
200
Unit
Vdc
Vdc
°C
°C
°C
MRF6VP41KHR6 MRF6VP41KHSR6
1
1 page  
1000
Ciss
TYPICAL CHARACTERISTICS
100
Coss
100
10 Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
10
TJ = 200°C
TJ = 175°C
TJ = 150°C
1
0
www.DataSheet4U.com
10 20 30 40
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
50
Figure 4. Capacitance versus Drain - Source Voltage
21
20
VDD = 50 Vdc
IDQ = 150 mA
19 f = 450 MHz
Pulse Width = 100 μsec
18 Duty Cycle = 20%
Gps
80
70
60
50
17 40
ηD
16 30
15 20
14 10
13 0
1 10 100 1000 2000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
23
IDQ = 6000 mA
22
3600 mA
21
20 1500 mA
19
18
17
10
750 mA
375 mA
150 mA
100
VDD = 50 Vdc
f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
1000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
2000
TC = 25°C
1
1
10
100 200
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
65
64 P3dB = 60.70 dBm (1174.89 W) Ideal
63
62 P1dB = 60.33 dBm (1078.94 W)
61
60 Actual
59
58
VDD = 50 Vdc
IDQ = 150 mA
57 f = 450 MHz
56 Pulse Width = 100 μsec
Duty Cycle = 20%
55
34 35 36 37 38 39 40 41 42 43 44
Pin, INPUT POWER (dBm) PULSED
Figure 7. Pulsed Output Power versus
Input Power
22
20
18
50 V
45 V
16 40 V
35 V
VDD = 30 V
14 IDQ = 150 Vdc, f = 450 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
12
0 200 400 600 800 1000 1200 1400
Pout, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain versus
Output Power
RF Device Data
Freescale Semiconductor
MRF6VP41KHR6 MRF6VP41KHSR6
5
5 Page 
www.DataSheet4U.com
RF Device Data
Freescale Semiconductor
MRF6VP41KHR6 MRF6VP41KHSR6
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MRF6VP41KHR6.PDF ] | |
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