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PDF MRF6VP11KHR6 Data sheet ( Hoja de datos )
| Número de pieza | MRF6VP11KHR6 | |
| Descripción | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to
150 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
•
Typical Pulsed Performance at
PoPuto=w1e0r 0G0aWin a—tts2P6edaBk, Pulse
W13i0dtMh H= z1:0V0DμDs=ec5,0DVuotyltsC,yIcDlQe
=
=
150 mA,
20%
Drain Efficiency — 71%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak
Power
Features
www.DataSheet4U••.coQInmuteaglirfaietdedUEpStoDaPMroatexcimtiounm of 50 VDD Operation
• Excellent Thermal Stability
• Designed for Push - Pull Operation
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Document Number: MRF6VP11KH
Rev. 0, 1/2008
MRF6VP11KHR6
10 - 150 MHz, 1000 W, 50 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
PART IS PUSH - PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +110
- 6.0, +10
- 65 to +150
150
200
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
RθJC
0.03
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6VP11KHR6
1
1 page  
1000
Ciss
TYPICAL CHARACTERISTICS
100
Coss
100
10 Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
10
TJ = 200°C
TJ = 175°C
TJ = 150°C
1
0
www.DataSheet4U.com
10 20 30 40
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
50
Figure 4. Capacitance versus Drain - Source Voltage
27 80
26 70
Gps
25 60
24 50
23 40
ηD
22 30
21 VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz 20
Pulse Width = 100 μsec, Duty Cycle = 20%
20 10
10 100 1000 2000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
32
IDQ = 6000 mA
3600 mA
28 1500 mA
750 mA
24 375 mA
150 mA
20
16
10
VDD = 50 Vdc, f = 130 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
100
1000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
2000
TC = 25°C
1
1
10
100 200
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
65
64
P3dB = 61.23 dBm (1327.39 W)
Ideal
63
P1dB = 60.57 dBm (1140.24 W)
62
61 Actual
60
59
58
57
VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
56
30 31 32 33 34 35 36 37 38 39
Pin, INPUT POWER (dBm) PULSED
Figure 7. Pulsed Output Power versus
Input Power
28
24
20
VDD = 30 V 35 V 40 V 45 V 50 V
16
IDQ = 150 mA, f = 130 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
12
0 200 400 600 800 1000 1200 1400 1600
Pout, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain versus
Output Power
RF Device Data
Freescale Semiconductor
MRF6VP11KHR6
5
5 Page 
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© Freescale Semiconductor, Inc. 2008. All rights reserved.
RDFocDuemveincteNuDmabtear: MRF6VP11KH
FRreeve.s0c, 1a/l2e00S8 emiconductor
MRF6VP11KHR6
11
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