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PDF MRF6V4300NBR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF6V4300NBR1 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts,
f = 450 MHz
Power Gain — 22 dB
Drain Efficiency — 60%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6V4300N
Rev. 3, 4/2010
MRF6V4300NR1
MRF6V4300NBR1
10--600 MHz, 300 W, 50 V
LATERAL N--CHANNEL
SINGLE--ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6V4300NR1
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6V4300NBR1
PARTS ARE SINGLE--ENDED
RFin/VGS
RFin/VGS
RFout/VDS
RFout/VDS
Table 1. Maximum Ratings
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Gate--Source Voltage
VGS --6.0, +10
Storage Temperature Range
Tstg -- 65 to +150
Case Operating Temperature
TC 150
Operating Junction Temperature (1,2)
TJ 225
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Vdc
Vdc
°C
°C
°C
© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
1
1 page  
1000
Ciss
TYPICAL CHARACTERISTICS
100
100 Coss
Measured with ±30 mV(rms)ac @ 1 MHz
10 Crss VGS = 0 Vdc
10
1
0 10 20 30 40 50
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
10
9 VGS = 3 V
8
7
6
5 2.75 V
4 2.63 V
3 2.5 V
2
1 2.25 V
0
0 20 40 60 80 100 120
DRAIN VOLTAGE (VOLTS)
Figure 6. DC Drain Current versus Drain Voltage
0
--5 VDD = 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz
--10 Two--Tone Measurements, 100 kHz Tone Spacing
--15
--20
--25
--30
IDQ = 450 mA
--35 650 mA
--40
--45
900 mA
--50 1350 mA
--55
--60 1125 mA
10
100 600
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Third Order Intermodulation Distortion
versus Output Power
TC = 25°C
1
1
10
100
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
23
22
IDQ = 1350 mA
21
900 mA
1125 mA
20
450 mA 650 mA
19
VDD = 50 Vdc
f = 450 MHz
18
10 100 600
Pout, OUTPUT POWER (WATTS) CW
Figure 7. CW Power Gain versus Output Power
60
59
P3dB = 56.06 dBm (403 W)
Ideal
58
57 P1dB = 55.15 dBm (327 W)
56
55 Actual
54
53
52
51
VDD = 50 Vdc, IDQ = 900 mA
f = 450 MHz
50
28 29 30 31 32 33 34 35 36 37 38
Pin, INPUT POWER (dBm)
Figure 9. CW Output Power versus Input Power
RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
5
5 Page 
RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet MRF6V4300NBR1.PDF ] | |
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