|
|
Número de pieza | 2SK3663 | |
Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
Fabricantes | NEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK3663 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3663
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK3663 is a switching device which can be driven directly
www.DataSheet4Ub.ycoam2.5 V power source.
The 2SK3663 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A)
RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.30 A)
RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)
ORDERING INFORMATION
PART NUMBER
2SK3663
Remark Marking : G26
PACKAGE
SC-70 (SSP)
PACKAGE DRAWING (Unit: mm)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
ID (DC)
ID (pulse)
PT
Channel Temperature
Tch
Storage Temperature
Tstg
20
±12
±0.5
±2.0
0.2
150
−55 to +150
V
V
A
A
W
°C
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 2500 mm2 x 1.1 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16529EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
2003
1 page SWITCHING CHARACTERISTICS
1000
VDD = 10 V
VGS = 4.0 V
RG = 10 Ω
100
www.DataSheet4U.com
10
0.01
td(off)
tf
tr
td(on)
0.1 1
ID - Drain Current - A
10
2SK3663
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
VGS = 0 V
Pulsed
1
0.1
0.01
0.001
0.4
0.6 0.8 1 1.2
VF (S-D) - Source to Drain Voltage - V
1.4
Data Sheet D16529EJ1V0DS
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2SK3663.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SK366 | Silicon N Channel Junction Type Transistor | Toshiba Semiconductor |
2SK3662 | Silicon N Channel MOS Type Switching Regulator | Toshiba Semiconductor |
2SK3663 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | NEC |
2SK3664 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | NEC |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |