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Número de pieza | HAT1097RJ | |
Descripción | Silicon P Channel Power MOS FET Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HAT1097RJ (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! HAT1097R, HAT1097RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4.5 V gate drive
www.DataSheet•4U.cHoimgh density mounting
• “J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
RENESAS Package code: PRSP0008DD-A
(Previous code: SOP-8 <FP-8DA>)
56 7 8
DD D D
8 7 65
1 234
4
G
SSS
123
REJ03G0529-0100
Rev.1.00
Feb.15.2005
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
HAT1097R
HAT1097RJ
Drain to source voltage
Gate to source voltage
VDSS
VGSS
–60
±20
–60
±20
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
ID
ID (pulse)Note1
IAPNote3
EARNote3
PchNote2
–5
–40
—
—
2
–5
–40
–5
2.14
2
Channel temperature
Tch 150 150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. Value at Tch = 25°C, Rg ≥ 50 Ω
(Ta = 25°C)
Unit
V
V
A
A
A
mJ
W
°C
°C
Rev.1.00, Feb.15.2005, page 1 of 7
1 page HAT1097R, HAT1097RJ
Reverse Drain Current vs.
Source to Drain Voltage
–10
–8
–10 V
Pulse Test
–6
–4 –5 V
VGS = 0, 5 V
–2
www.DataSheet4U.com
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source Drain Voltage VSD (V)
Avalanche Test Circuit
Vin
-15 V
V DS
Monitor
Rg
50 Ω
L
I AP
Monitor
D. U. T
VDD
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
-10 V
VDD
= -30 V
Maximum Avalanche Energy vs.
Channel Temperature Derating
2.5
I AP = −5 A
2.0 V DD = −25 V
duty < 0.1 %
Rg > 50 Ω
1.5
1.0
0.5
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Avalanche Waveform
EAR =
1
2
L•
I
2
AP
•
VDSS
VDSS - V DD
I AP
ID
V(BR)DSS
VDS
VDD
0
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.1.00, Feb.15.2005, page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet HAT1097RJ.PDF ] |
Número de pieza | Descripción | Fabricantes |
HAT1097R | Silicon P Channel Power MOS FET Power Switching | Renesas Technology |
HAT1097RJ | Silicon P Channel Power MOS FET Power Switching | Renesas Technology |
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