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PDF AP40T03S Data sheet ( Hoja de datos )
| Número de pieza | AP40T03S | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP40T03S (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Advanced Power
Electronics Corp.
AP40T03S/P
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low Gate Charge
www.DataSheet4▼U.cFomast Switching
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
25V
25mΩ
28A
G D S TO-263
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP40T03P) are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=100℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Rating
25
± 25
28
24
95
31.25
0.25
-55 to 150
-55 to 150
TO-220
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
4.0
62
Unit
℃/W
℃/W
Data and specifications subject to change without notice
200127031
1 page  
AP40T03S/P
12
I D =18A
9
www.DataSheet4U.com
6
V DS =10V
V DS =15V
V DS =20V
3
10000
1000
100
f=1.0MHz
Ciss
Coss
Crss
0
0 3 6 9 12
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
10
1
8 15 22 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
Tj=150 o C
1
Tj=25 o C
0.1
0
0.4 0.8 1.2
V SD (V)
1.6
Fig 11. Forward Characteristic of
Reverse Diode
2.5
2
1.5
1
0.5
-50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP40T03S.PDF ] | |
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