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PDF STP6NS25 Data sheet ( Hoja de datos )
| Número de pieza | STP6NS25 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STP6NS25
N-CHANNEL 250V - 0.9Ω - 6A TO-220
MESH OVERLAY™ MOSFET
TYPE
VDSS
RDS(on)
ID
STP6NS25
250 V < 1.1 Ω
6A
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.9 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
November 2002
Value
250
250
± 20
6
4
24
70
0.56
5
–65 to 150
150
(1) ISD≤ 6A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/8
1 page  
STP6NS25
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STP6NS25.PDF ] | |
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