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Teilenummer | K2800 |
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Beschreibung | MOSFET ( Transistor ) - 2SK2800 | |
Hersteller | Hitachi Semiconductor | |
Logo | ||
Gesamt 10 Seiten 2SK2800
Silicon N Channel MOS FET
High Speed Power Switching
Features
www.Data•SheLeot4wUo.cno-mresistance
RDS(on) = 15 mΩ typ.
• High speed switching
• Low drive current
• 4V gate drive device can be driven from 5V source
Outline
TO–220AB
ADE-208-513G (Z)
8th. Edition
Jun 1998
D
G
S
1
2
3
1. Gate
2. Drain (Flange)
3. Source
2SK2800
1000
500
Body–Drain Diode Reverse
Recovery Time
200
100
50
20 di / dt = 50 A / µs
www.DataSheet4U1.c0om
0.1 0.3
VGS = 0, Ta = 25 °C
1 3 10 30 100
Reverse Drain Current I DR (A)
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
Coss
200
100 Crss
50
0 10 20 30 40 50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100
I D = 40 A
80
V DD = 10 V
25 V
60 VDS
50 V
VGS
40
20
16
12
8
20 V DD = 50 V
25 V
4
10 V
0
0 8 16 24 32 40
Gate Charge Qg (nc)
1000
300
100
30
10
Switching Characteristics
t d(off)
tf
tr
t d(on)
3 VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
1
0.1 0.3 1 3 10 30 100
Drain Current I D (A)
6
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ K2800 Schematic.PDF ] |
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