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PDF MRF392 Data sheet ( Hoja de datos )
| Número de pieza | MRF392 | |
| Descripción | BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon Push-Pull
RF Power Transistor
Designed primarily for wideband large–signal output and driver amplifier
stages in the 30 to 500 MHz frequency range.
• Specified 28 Volt, 400 MHz Characteristics —
Output Power = 125 W
Typical Gain = 10 dB
Efficiency = 55% (Typ)
• Built–In Input Impedance Matching Networks for Broadband Operation
• Push–Pull Configuration Reduces Even Numbered Harmonics
www.DataSheet4•U.cGoomld Metallization System for High Reliability
• 100% Tested for Load Mismatch
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
2
6
5, 8 1, 4
7
3
The MRF392 is two transistors in a single package with separate base and collector leads
and emitters common. This arrangement provides the designer with a space saving
device capable of operation in a push–pull configuration.
PUSH–PULL TRANSISTORS
Order this document
by MRF392/D
MRF392
125 W, 30 to 500 MHz
CONTROLLED “Q”
BROADBAND PUSH–PULL
RF POWER TRANSISTOR
NPN SILICON
CASE 744A–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
VCEO
30
Vdc
VCBO
60
Vdc
VEBO
4.0
Vdc
IC 16 Adc
PD 270 Watts
1.54 W/°C
Storage Temperature Range
Junction Temperature
Tstg – 65 to +150
TJ 200
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 0.65 °C/W
NOTE:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull
amplifier.
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF392
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MRF392.PDF ] | |
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