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PDF MRF314A Data sheet ( Hoja de datos )
| Número de pieza | MRF314A | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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MRF314A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The MRF314A is Designed for Class
C Power Amplifier Applications up to
200 MHz.
www.DataFShEeeAt4TUU.coRmES:
• PG = 10 dB min. at 30 W/ 150 MHz
• Withstands 30:1 Load VSWR
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 4.0 A
VCBO
65 V
VCEO
35 V
VEBO
PDISS
TJ
TSTG
θJC
4.0 V
60 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
2.9 OC/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
E
C
E
ØC B
D
#8-32 UNC-2A
HI
J
G
F
E
DIM
A
B
C
D
E
F
G
H
I
J
M IN IM U M
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10770
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 200 mA
BVCES
IC = 200 mA
BVEBO
IE = 10 mA
ICBO
VE = 28 V
hFE VCE = 5.0 V
IC = 200 mA
MINIMUM TYPICAL MAXIMUM
35
65
4.0
2.0
5 ---
UNITS
V
V
V
mA
---
COB
VCB = 28 V
f = 1.0 MHz
50 pF
PG
ηC VCC = 28 V
ψ
POUT = 30 W
f = 150 MHz
10 13.5
50 60
dB
%
30:1 minimum without degration in output power
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| PDF Descargar | [ Datasheet MRF314A.PDF ] | |
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