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Teilenummer | H45N03E |
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Beschreibung | N-Channel Enhancement-Mode MOSFET | |
Hersteller | Hi-Sincerity Mocroelectronics | |
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Gesamt 5 Seiten HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200518
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 1/5
H45N03E
N-Channel Enhancement-Mode MOSFET (25V, 45A)
Features
• RDS(on)=15mΩ@VGS=10V, ID=25A
www.DataSh•eReDt4SU(on.c)=o2m0mΩ@VGS=4.5V, ID=25A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM
H45N03E Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
Internal Schematic
Diagram
G
D
S
Maximum Ratings & Thermal Characteristics
(TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *1
Maximum Power Dissipation @ TC=25oC
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse
ID=35A, VDD=20V, L=0.14mH
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(PCB mounted)*2
*1: Maximum DC current limited by the package.
*2: 1-in2 2oz Cu PCB board
VDS
VGS
ID
IDM
PD
TJ,Tstg
EAS
RθJC
RθJA
Value
25
±20
45
180
60
-55 to 150
300
2.1
55
Units
V
V
A
A
W
oC
mJ
OC/W
OC/W
Switching
Test Circuit
VDD
VGEN
VIN
RG G
D
S
VOUT
Switching
Waveforms
td(on)
ton
tr td(off)
90%
toff
tf
90 %
Output, VOUT
Input, VIN 10%
10%
10%
Inverted
90%
50% 50%
Pulse Width
H45N03E
HSMC Product Specification
| ||
Seiten | Gesamt 5 Seiten | |
PDF Download | [ H45N03E Schematic.PDF ] |
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