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STPR1020CT Schematic ( PDF Datasheet ) - Sirectifier Semiconductors

Teilenummer STPR1020CT
Beschreibung (STPR1010CT - STPR1020CT) Ultra Fast Recovery Diodes
Hersteller Sirectifier Semiconductors
Logo Sirectifier Semiconductors Logo 




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STPR1020CT Datasheet, Funktion
STPR1010CT thru STPR1020CT
Ultra Fast Recovery Diodes
C(TAB)
AC A
A
C
A
A=Anode, C=Cathode, TAB=Cathode
www.DataSShTePeRt410U1.0cComT
STPR1020CT
VRRM
V
100
200
VRMS
V
70
140
VDC
V
100
200
Dimensions TO-220AB
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current
IFSM
Non Repetitive Peak Forward Surge Current
Per Diode Sinusoidal (JEDEC METHOD)
@TC=125oC
TP=10ms
TP=8.3ms
Maximum Forward Voltage
VF Pulse Width=300us
Duty Cycle
IF=5A
IF=5A
IF=10A
IF=10A
@TJ=25oC
@TJ=125oC
@TJ=25oC
@TJ=125oC
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
@TJ=100oC
CJ Typical Junction Capacitance Per Element (Note 1)
TRR Maximum Reverse Recovery Time (Note 2)
ROJC Typical Thermal Resistance
TJ, TSTG Operating And Storage Temperature Range
NOTES: 1. Measured at 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
Maximum Ratings
10
50
55
0.975
0.925
1.25
1.20
5
100
80
30
4.0
-55 to +150
Unit
A
A
V
uA
pF
ns
oC/W
oC
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any





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