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PDF MIL-PRF-19500 Data sheet ( Hoja de datos )
| Número de pieza | MIL-PRF-19500 | |
| Descripción | RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
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RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
PD - 91394E
IRHM7460SE
JANSR2N7392 500V
N-CHANNEL
REF: MIL-PRF-19500/661
RAD Hard HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHM7460SE 100K Rads (Si) 0.32Ω
I D QPL Part Number
18A JANSR2N7392
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International Rectifiers RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-254AA
Features:
! Single Event Effect (SEE) Hardened
! Ultra Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
18
11.7 A
72
250 W
2.0 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy ➁
500
Avalanche Current ➀
18
Repetitive Avalanche Energy ➀
25
Peak Diode Recovery dv/dt ➂
3.8
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10 sec.)
9.3 (Typical)
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
5/17/01
1 page  
Pre-Irradiation
IRHM7460SE
8000
6000
4000
2000
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VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 18A
16
12
VDS = 400V
VDS = 250V
VDS = 100V
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 40 80 120 160 200
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.2
VGS = 0 V
0.6 1.0 1.4 1.8
VSD ,Source-to-Drain Voltage (V)
2.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
100us
10
1ms
TC
TJ
=
=
25 ° C
150° C
Single Pulse
1
10 100
10ms
1000
VDS , Drain-to-Source Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MIL-PRF-19500.PDF ] | |
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