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PDF NTB45N06L Data sheet ( Hoja de datos )
| Número de pieza | NTB45N06L | |
| Descripción | N-Channel TO-220 and D2PAK | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTP45N06L, NTB45N06L
Power MOSFET
45 Amps, 60 Volts, Logic Level,
N−Channel TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
www.DataSheet4•U.Pcobm−Free Packages are Available
• Higher Current Rating
• Lower RDS(on)
• Lower VDS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Tighter VSD Specification
• Lower Diode Reverse Recovery Time
• Lower Reverse Recovery Stored Charge
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
http://onsemi.com
45 AMPERES, 60 VOLTS
RDS(on) = 28 mW
N−Channel
D
G
S
MARKING
DIAGRAMS
4
Drain
4
TO−220
CASE 221A
STYLE 5
NTx45N06L
AYWW
1
2
3
1
Gate
3
Source
2
Drain
4
Drain
2
1
3
4
D2PAK
CASE 418B
STYLE 2
NTx45N06L
AYWW
2
1 Drain 3
Gate
Source
NTx45N06L = Device Code
x = P or B
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 1
1
Publication Order Number:
NTP45N06L/D
1 page  
NTP45N06L, NTB45N06L
4000
3600
3200
2800
2400
VDS = 0 V
Ciss
Crss
VGS = 0 V
TJ = 25°C
2000
1600
Ciss
1200
800 Coss
400 Crss
0
10 5 VGS 0 VDS 5 10 15 20 25
www.DataSheet4U.com
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
1000
VDS = 30 V
ID = 45 A
VGS = 5 V
tr
tf
100
td(off)
6
5
Q1
4
QT
VGS
Q2
3
2
1 ID = 45 A
TJ = 25°C
0
0 4 8 12 16 20 24
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
48
VGS = 0 V
40 TJ = 25°C
32
24
16
td(on)
10
1 10
100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
8
0
0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 0.92 0.96 1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1000
100
VGS = 15 V
SINGLE PULSE
TC = 25°C
dc
10 10 ms
1 ms
1
RDS(on) Limit
Thermal Limit
100 ms
Package Limit
0.1
0.10
1
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
280
ID = 45 A
240
200
160
120
80
40
0
25 50 75 100 125 150 175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NTB45N06L.PDF ] | |
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