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PDF MOC8204M Data sheet ( Hoja de datos )
| Número de pieza | MOC8204M | |
| Descripción | High Voltage Phototransistor Optocouplers | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M
High Voltage Phototransistor Optocouplers
September 2007
tm
Features
■ High voltage:
– MOC8204M, BVCER = 400V
– H11D1M, H11D2M, BVCER = 300V
– H11D3M, BVCER = 200V
www.DataSheet4U.c■omHigh isolation voltage:
– 7500 VAC peak, 1 second
■ Underwriters Laboratory (UL) recognized
File # E90700, Volume 2
Applications
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
■ Appliance sensor systems
■ Industrial controls
General Description
The H11DXM, 4N38M and MOC8204M are photo-
transistor-type optically coupled optoisolators. A gallium
arsenide infrared emitting diode is coupled with a high
voltage NPN silicon phototransistor. The device is sup-
plied in a standard plastic six-pin dual-in-line package.
Schematic
ANODE 1
CATHODE 2
N/C 3
6 BASE
5 COLLECTOR
4 EMITTER
©2000 Fairchild Semiconductor Corporation
H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com
1 page  
Typical Performance Curves
1.8
1.7
1.6
1.5
1.4
TA = 55˚C
1.3
TA = 25˚C
1.2
1.1
www.DataSheet4U.com 1.0
1
TA = 100˚C
10
100
IF - LED FORWARDCURRENT (mA)
Fig. 1 LED Forward Voltage vs. Forward Current
10
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25˚C
1
10
1
0.1
0.01
1
0.1
IF = 50 mA
IF = 10 mA
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25˚C
IF = 5 mA
0.1 1
10 100
VCE - COLLECTOR VOLTAGE (V)
Fig. 2 Normalized Output Characteristics
IF = 20 mA
IF = 10 mA
IF = 5 mA
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25˚C
0.01
1
10
IF - LED INPUT CURRENT (mA)
Fig. 3 Normalized Output Current vs. LED Input Current
0.1
-60 -40 -20
0
20 40 60 80 100
TA - AMBIENT TEMPERATURE (˚C)
Fig. 4 Normalized Output Current vs. Temperature
10000
1000
100
10
Normalized to:
VCE = 100 V
RBE = 106 Ω
TA = 25˚C
VCE = 300 V
VCE = 100 V
VCE = 50 V
1
0.1
10 20 30 40 50 60 70 80 90 100 110
TA - AMBIENT TEMPERATURE (˚C)
Fig. 5 Normalized Dark Current vs. Ambient Temperature
10
9
8 IF = 50 mA
7
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25˚C
6
5
4
3
2 IF = 10 mA
1
IF = 5 mA
0
-60 -40 -20 0 20 40 60 80 100
TA - AMBIENT TEMPERATURE (˚C)
Fig. 6 Normalized Collector-Base Current vs. Temperature
©2000 Fairchild Semiconductor Corporation
H11DXM, 4N38M, MOC8204M Rev. 1.0.2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MOC8204M.PDF ] | |
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