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Número de pieza | AP03N70F | |
Descripción | N-CHANNEL ENHANCEMENT MODE | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP03N70F (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP03N70F
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
▼ Repetitive Avalanche Rated
▼ Fast Switching
www.DataSheet▼4U.Scoimmple Drive Requirement
G
D
S
BVDSS 600/650/700V
RDS(ON)
3.6Ω
ID 3.3A
Description
AP03N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.TO-220FM
type provide high blocking voltage to overcome voltage surge and sag in
the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
GD
S
TO-220FM
The TO-220FM package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,DC-AC converters and high current high speed switching
circuits.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
- /A/H
Rating
600/650/700
± 30
3.3
2.1
13.2
29
0.23
85
3.3
3.3
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
4.3
62
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Unit
℃/W
℃/W
Data & specifications subject to change without notice
200303032
1 page AP03N70F
16
14
12
www.DataSheet4U.com
10
I D =3.3A
V DS =480V
8
6
4
2
0
0 2 4 6 8 10 12 14 16
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
100
Coss
Crss
1
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
5
4
3
2
1
0
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AP03N70F.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP03N70F | N-CHANNEL ENHANCEMENT MODE | Advanced Power Electronics |
AP03N70H | N-CHANNEL ENHANCEMENT MODE | Advanced Power Electronics |
AP03N70H-A-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP03N70H-H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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