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PDF SI5402BDC Data sheet ( Hoja de datos )
| Número de pieza | SI5402BDC | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Specification Comparison
Vishay Siliconix
Si5402BDC vs. Si5402DC
Description:
Package:
Pin Out:
N-Channel, 30-V (D-S) MOSFET
1206-8 ChipFET®
Identical
Part Number Replacements:
Si5402BDC-T1-E3 Replaces Si5402DC-T1-E3
Si5402BDC-T1-E3 Replaces Si5402DC-T1
www.DataSheeSt4uUm.cmomary of Performance:
The Si5402BDC is the replacement to the original Si5402DC; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si5402BDC Si5402DC Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
+20
30
+20 V
Continuous Drain Current
TA = 25°C
TA = 70°C
ID
6.7 6.7
4.8 4.8
Pulsed Drain Current
IDM 20
20 A
Continuous Source Current
(MOSFET Diode Conduction)
IS 2.1 2.1
Power Dissipation
TA = 25°C
TA = 70°C
PD
2.5
1.3
2.5
1.3 W
Operating Junction & Storage Temperature Range
Tj & Tstg
-55 to 150
-55 to 150
°C
Maximum Junction-to-Ambient
RthJA
50
50 °C/W
SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED)
Si5402BDC
Parameter
Symbol Min Typ
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
VGS = 10 V
VGS(th)
IGSS
IDSS
ID(on)
1.0
20
Drain-Source On-Resistance
VGS= 10 V
VGS = 4.5 V
rDS(on)
0.029
0.035
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
gfs
VSD
Qg
Qgs
Qgd
Rg
19
0.8
10
1.9
1.6
14
Switching
Turn-On Time
Turn-Off Time
Source-Drain Reverse Recovery Time
td(on)
tr
td(off)
tf
trr
10
10
27
10
20
Max
3.0
+100
-1
0.035
0.042
1.2
20
15
15
40
15
60
Si5402DC
Min Typ Max Unit
1.0 NS V
+100
nA
-1 µA
20 A
0.030
0.045
0.035
0.055
Ω
15 S
0.8 1.2 V
13 20
1.3 nC
3.1
NS Ω
10 15
10 15
25 40 ns
10 15
30 60
Document Number 74062
10-May-05
www.vishay.com
1 page | ||
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| PDF Descargar | [ Datasheet SI5402BDC.PDF ] | |
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