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PDF MRF9060MBR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF9060MBR1 | |
| Descripción | The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9060M/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 18.0 dB
Efficiency — 40% (Two Tones)
IMD — –31.5 dBc
www.DataSheet4U•.coInmtegrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• TO–270 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per
24 mm, 13 inch Reel.
• TO–272 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per
44 mm, 13 inch Reel.
MRF9060MR1
MRF9060MBR1
945 MHz, 60 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265–07, STYLE 1
TO–270 DUAL LEAD
PLASTIC
MRF9060MR1
CASE 1337–01, STYLE 1
TO–272 DUAL LEAD
PLASTIC
MRF9060MBR1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
–0.5, +15
223
1.79
–65 to +150
175
Max
0.56
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF9060MR1 MRF9060MBR1
1
1 page  
INPUT
C6 C17
B1
VGG
C7
L1 C4
C1 C2 WB1
C3 C5
VDD
B2
WB2
C8
C9
C14 C15 C16
L2
C10 C11
C12
C13
OUTPUT
www.DataSheet4U.com
MRF9060M
MRF9060MB
Figure 2. 930–960 MHz Broadband Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF9060MR1 MRF9060MBR1
5
5 Page 
aaa M
B
2X r1
C AM BM
PACKAGE DIMENSIONS
E1 A
www.DataSheet4U.com D1
2X b1
aaa M C A M
PIN ONE
ID
D
2
PIN 3
1
PIN ONE
ID
c1
A1
A2
7
H
DATUM
PLANE
F
ZONE "J"
Y
MOTOROLA RF DEVICE DATA
E
VIEW Y–Y
A
Y
C
SEATING
PLANE
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 1337–01
ISSUE O
TO–272 DUAL LEAD
PLASTIC
MRF9060MBR1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DATUM PLANE -H- IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE -H-.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS -A- AND -B- TO BE DETERMINED AT
DATUM PLANE -H-.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A .098 .110 2.49 2.79
A1 .038 .044 0.96 1.12
A2 .040 .042 1.02 1.07
D .926 .934 23.52 23.72
D1 .810 BSC
20.57 BSC
E .438 .442 11.12 11.23
E1 .246 .254 6.25 6.45
F .025 BSC
0.64 BSC
b1 .193 .199 4.90 5.05
c1 .007 .011 .18 .28
r1 .063 .068 1.60 1.73
aaa .004
.10
MRF9060MR1 MRF9060MBR1
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MRF9060MBR1.PDF ] | |
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