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PDF MRF9060LR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF9060LR1 | |
| Descripción | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large−signal, common−source amplifier applica-
tions in 26 volt base station equipment.
•
www.DataSheet4U.com•
Typical Two−Tone Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 17 dB
Efficiency — 40%
IMD — −31 dBc
Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
MRF9060
Rev. 8, 12/2004
MRF9060LR1
MRF9060LSR1
945 MHz, 60 W, 26 V
LATERAL N−CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B−05, STYLE 1
NI−360
MRF9060LR1
Table 1. Maximum Ratings
Rating
Drain−Source Voltage
Gate−Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
CASE 360C−05, STYLE 1
NI−360S
MRF9060LSR1
MRF9060LR1
MRF9060LSR1
Symbol
VDSS
VGS
PD
Tstg
TJ
MRF9060LR1
MRF9060LSR1
Symbol
RθJC
Value
−0.5, +65
−0.5, + 15
159
0.91
219
1.25
−65 to +150
200
Value
1.1
0.8
Unit
Vdc
Vdc
W
W/°C
W
W/°C
°C
°C
Unit
°C/W
Class
1 (Minimum)
M1 (Minimum)
NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2004. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9060LR1 MRF9060LSR1
5−1
1 page  
INPUT
C6 C17
B1
VGG
C1
C7
L1
C2
C3
C4
WB1
C5
VDD
B2
WB2
C8
C9
C13
L2
C10
C15 C16
C11
C14 OUTPUT
C12
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MRF9060
900 MHz
Rev-02
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 930 − 960 MHz Broadband Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRF9060LR1 MRF9060LSR1
5−5
5 Page 
PACKAGE DIMENSIONS
B
B
(FLANGE)
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E
A
2X Q
G aaa M T A M B M
1
3
2
2X D
bbb M T A M B M
2X K
N
(LID)
ccc M T A M B M
C
R
(LID)
ccc M T A M B M
HF
M
(INSULATOR)
A
T
SEATING
PLANE
bbb M T A M B M
S
(INSULATOR)
aaa M T A M
BM
CASE 360B−05
ISSUE F
NI−360
MRF9060LR1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
A 0.795 0.805
B 0.225 0.235
C 0.125 0.175
D 0.210 0.220
E 0.055 0.065
F 0.004 0.006
G 0.562 BSC
H 0.077 0.087
K 0.220 0.250
M 0.355 0.365
N 0.357 0.363
Q 0.125 0.135
R 0.227 0.233
S 0.225 0.235
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
MILLIMETERS
MIN MAX
20.19 20.45
5.72 5.97
3.18 4.45
5.33 5.59
1.40 1.65
0.10 0.15
14.28 BSC
1.96 2.21
5.59 6.35
9.02 9.27
9.07 9.22
3.18 3.43
5.77 5.92
5.72 5.97
0.13 REF
0.25 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
A
B
A
(FLANGE)
1
B
(FLANGE)
2X D
2
2X K
bbb M T A M B M
N
(LID)
ccc M
TAM
BM
E
C
PIN 3
M
T
SEATING
PLANE
(INSULATOR)
bbb M T A M B M
R
(LID)
ccc M T A M
H
BM
F
S
(INSULATOR)
aaa M T A M B M
CASE 360C−05
ISSUE D
NI−360S
MRF9060LSR1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
INCHES
DIM MIN MAX
A 0.375 0.385
B 0.225 0.235
C 0.105 0.155
D 0.210 0.220
E 0.035 0.045
F 0.004 0.006
H 0.057 0.067
K 0.085 0.115
M 0.355 0.365
N 0.357 0.363
R 0.227 0.23
S 0.225 0.235
aaa 0.005 REF
bbb 0.010 REF
ccc 0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MILLIMETERS
MIN MAX
9.53 9.78
5.72 5.97
2.67 3.94
5.33 5.59
0.89 1.14
0.10 0.15
1.45 1.70
2.16 2.92
9.02 9.27
9.07 9.22
5.77 5.92
5.72 5.97
0.13 REF
0.25 REF
0.38 REF
RF Device Data
Freescale Semiconductor
MRF9060LR1 MRF9060LSR1
5−11
11 Page | ||
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| PDF Descargar | [ Datasheet MRF9060LR1.PDF ] | |
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