(PDF) SPN6561 Datasheet - Dual N-Channel Enhancement Mode MOSFET

Número de pieza	SPN6561
Descripción	Dual N-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPN6561 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power www.DataShmeeatn4Uag.ceomment and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES N-Channel 30V/2.8A,RDS(ON)= 60mΩ@VGS=10V 30V/2.3A,RDS(ON)= 80mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design PIN CONFIGURATION( SOT-23-6L ) PART MARKING 2006/06/05 Ver.1 Page 1 1 page SPN6561 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS www.DataSheet4U.com 2006/06/05 Ver.1 Page 5 5 Page

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PDF SPN6561 Data sheet ( Hoja de datos )