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PDF SPN6435 Data sheet ( Hoja de datos )

Número de pieza SPN6435
Descripción Dual N-Channel Enhancement Mode MOSFET
Fabricantes SYNC POWER 
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SPN6435
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN6435 is the Dual N-Channel enhancement
mode field effect transistors are produced using high
cell density DMOS technology. These products have
been designed to minimize on-state resistance while
provide rugged, reliable, and fast switching
performance. They can be used in most applications
requiring up to 300mA DC and can deliver pulsed
www.DataShceuert4reUn.ctosmup to 1.0A. These products are particularly
suited for low voltage, low current applications such as
small servo motor control, power MOSFET gate
drivers, and other switching applications.
APPLICATIONS
z Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
z High saturation current capability. Direct
Logic-Level Interface: TTL/CMOS
z Battery Operated Systems
z Solid-State Relays
FEATURES
‹ 40V/0.30A , RDS(ON)= 4.0@VGS=10V
‹ 40V/0.20A , RDS(ON)= 5.0@VGS=5.0V
‹ 40V/0.02A , RDS(ON)= 10.0@VGS=2.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-363 package design
PIN CONFIGURATION ( SOT-363 / SC-70-6L )
PART MARKING
2007/04/25 Ver.1
Page 1

1 page




SPN6435 pdf
SPN6435
Dual N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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2007/04/25 Ver.1
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