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PDF SPN6335 Data sheet ( Hoja de datos )
| Número de pieza | SPN6335 | |
| Descripción | Dual N-Channel Enhancement Mode MOSFET | |
| Fabricantes | SYNC POWER | |
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SPN6335
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN6335 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
www.DataShmeeatn4Uag.ceomment and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
N-Channel
20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-363 (SC-70-6L) package design
PIN CONFIGURATION( SOT-363 / SC-70-6L)
PART MARKING
2007/01/ 02 Ver.2
Page 1
1 page  
SPN6335
Dual N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2007/01/ 02 Ver.2
Page 5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SPN6335.PDF ] | |
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