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PDF FDS6680AS Data sheet ( Hoja de datos )
| Número de pieza | FDS6680AS | |
| Descripción | 30V N-Channel PowerTrench SyncFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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March 2005
FDS6680AS
30V N-Channel PowerTrench® SyncFET™
General Description
Features
The FDS6680AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6680AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6680AS as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDS6680 in parallel with a Schottky
diode.
www.DataSheet4UA.cpopmlications
• 11.5 A, 30 V. RDS(ON) max= 10.0 mΩ @ VGS = 10 V
RDS(ON) max= 12.5 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (22nC typical)
• High performance trench technology for extremely low
RDS(ON) and fast switching
• High power and current handling capability
• DC/DC converter
• Low side notebooks
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6680AS
FDS6680AS
13’’
FDS6680AS
FDS6680AS_NL (Note 4)
13’’
©2005 Fairchild Semiconductor Corporation
5
6
7
8
Ratings
30
±20
11.5
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2500 units
FDS6680AS Rev B(X)
1 page  
Typical Characteristics (continued)
10
ID =11.5A
8
6
4
VDS = 10V
20V
15V
2
0
0 5 10 15 20
Qg, GATE CHARGE (nC)
www.DataSheet4U.comFigure 7. Gate Charge Characteristics.
25
1000
100 RDS(ON) LIMIT
10
100µs
1ms
10ms
100ms
1s
1 10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1800
1500
f = 1MHz
VGS = 0 V
1200
900
Ciss
600 Coss
300
Crss
0
0
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 125°C/W
40 TA = 25°C
30
20
10
0
0.01
0.1
1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6680AS Rev B(X)
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDS6680AS.PDF ] | |
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