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Teilenummer | IRFW530A |
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Beschreibung | Advanced Power MOSFET | |
Hersteller | Fairchild Semiconductor | |
Logo | ||
Gesamt 8 Seiten Advanced Power MOSFET
IRFW/I530A
FEATURES
www.DataSheet4U.com
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 ΟC Operating Temperature
Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.092 Ω(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25 ΟC) *
Total Power Dissipation (TC=25 ΟC )
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.11 Ω
ID = 14 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
100
14
9.9
56
+_ 20
261
14
5.5
6.5
3.8
55
0.36
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ ΟC
ΟC
Thermal Resistance
Symbol
Characteristic
Typ.
R θJC
R θJA
R θJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
2.74
40
62.5
Units
ΟC /W
Rev. B
©1999 Fairchild Semiconductor Corporation
IRFW/I530A
N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.DataSheet4U.com
DUT
IS
VGS Driver
RG
VGS
+
VDS
--
L
Same Type
as DUT
•dv/dt controlled by “RG”
•IS controlled by Duty Factor “D”
VDD
VGS
( Driver )
IS
( DUT )
VDS
( DUT )
D = --G--a-t-e--P--u-l-s--e--W--i-d--t-h----
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
6 Page | ||
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PDF Download | [ IRFW530A Schematic.PDF ] |
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