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PDF FW349 Data sheet ( Hoja de datos )
| Número de pieza | FW349 | |
| Descripción | General-Purpose Switching Device | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FW349 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Ordering number : EN8750
FW349
SANYO Semiconductors
DATA SHEET
FW349
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
www.DataSheet4U• .cMomotor drive application.
• Low ON-resistance.
• Ultrahigh-speed switching.
• Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
• High-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Symbol
VDSS
VGSS
ID
ID
IDP
PD
Total Dissipation
Channel Temperature
Storage Temperature
Marking : W349
PT
Tch
Tstg
Conditions
duty cycle≤1%
duty cycle≤1%
Mounted on a ceramic board
(1500mm2✕0.8mm)1unit, PW≤10s
Mounted on a ceramic board
(1500mm2✕0.8mm), PW≤10s
N-channel
45
±20
5
6
20
P-channel
--45
±20
--4.5
--5
--18
1.8
Unit
V
V
A
A
A
W
2.2
150
--55 to +150
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907PA TI IM TC-00000835 No.8750-1/6
1 page  
FW349
yfs -- ID
[Pch]
2
VDS= --10V
10
7
5 25°C
3
2
Ta=
--25°C
75°C
1.0
7
5
3
2
0.1
www.DataSheet4U.com--0.01 2 3
5
3
2
5 7 --0.1 2 3 5 7 --1.0
Drain Current, ID -- A
SW Time -- ID
td(off)
23
5 7 --10
IT12888
[Pch]
VDD= --24V
VGS= --10V
100
7 tf
5
tr
3
2 td(on)
10
7
5
--0.1
23
--10
VDS= --24V
--9 ID= --4.5A
5 7 --1.0
23
Drain Current, ID -- A
VGS -- Qg
--8
5 7 --10
IT12890
[Pch]
--7
--6
--5
--4
--3
--2
--1
0
0 5 10 15 20 25 30
Total Gate Charge, Qg -- nC
IT12892
PD -- Ta
[Nch, Pch]
2.6
Mounted on a ceramic board (1500mm2✕0.8mm)
2.4 PW≤10s
2.2
2.0
1.8
1.6
1.4
1.2
1.0
Total
1unit
dissipation
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT12894
IS -- VSD
[Pch]
--10
7 VGS=0V
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
5
3
2
1000
7
5
3
2
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Diode Forward Voltage, VSD -- V IT12889
Ciss, Coss, Crss -- VDS [Pch]
f=1MHz
Ciss
Coss
100 Crss
7
5
3
0 --5 --10 --15 --20 --25 --30 --35 --40 --45
Drain-to-Source Voltage, VDS -- V IT12891
ASO
[Pch]
5
3
2
IDP= --18A
--10
7
5
ID= --4.5A
3
2
--1.0
7
5
3
2 Operation in this
≤10µs
10ms
100ms
100µs
1ms
DC ope1ra0tsion
--0.1
7
area is limited by RDS(on).
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board (1500mm2✕0.8mm) 1unit
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 5 7--100
Drain-to-Source Voltage, VDS -- V IT12893
2.0 PD(FET 1) -- PD(FET 2) [Nch, Pch]
Mounted on a ceramic board (1500mm2✕0.8mm)
1.8 PW≤10s
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Allowable Power Dissipation, PD (FET 2) -- W IT12895
No.8750-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FW349.PDF ] | |
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