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VI20100SG Schematic ( PDF Datasheet ) - Vishay Siliconix

Teilenummer VI20100SG
Beschreibung High Voltage Trench MOS Barrier Schottky Rectifier
Hersteller Vishay Siliconix
Logo Vishay Siliconix Logo 




Gesamt 5 Seiten
VI20100SG Datasheet, Funktion
V20100SG, VF20100SG, VB20100SG, VI20100SG
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20100SG
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
123
VF20100SG
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB20100SG
NC K
A HEATSINK
VI20100SG
3
2
1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
100 V
IFSM
150 A
VF at IF = 20 A
0.75 V
TJ max.
Package
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variations
Single die
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20100SG VF20100SG VB20100SG VI20100SG
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
Peak repetitive reverse current
at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VRRM
IF(AV)
IFSM
EAS
IRRM
dV/dt
VAC
100
20
150
150
1.0
10 000
1500
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
UNIT
V
A
A
mJ
A
V/μs
V
°C
Revision: 09-Sep-13
1 Document Number: 88966
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





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