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Teilenummer | PH20100S |
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Beschreibung | N-channel TrenchMOS standard level FET | |
Hersteller | NXP Semiconductors | |
Logo | ||
Gesamt 12 Seiten PH20100S
N-channel TrenchMOS™ standard level FET
Rev. 02 — 17 August 2004
Product data sheet
1. Product profile
www.DataSheet4U.com
1.1 General description
Standard level N-channel enhancement mode field effect transistor in a plastic package
using TrenchMOS™ technology.
1.2 Features
s Low thermal resistance
s Low gate drive current
s SO8 equivalent area footprint
s Low on-state resistance.
1.3 Applications
s DC-to-DC converters
s Switched-mode power supplies
1.4 Quick reference data
s VDS ≤ 100 V
s Ptot ≤ 62.5 W
s ID ≤ 34.3 A
s RDSon ≤ 23 mΩ
2. Pinning information
Table 1:
Pin
1,2,3
4
mb
Discrete Pinning
Description
source (s)
gate (g)
mounting base;
connected to drain (d)
Simplified outline
mb
Symbol
d
g
mbb076 s
1234
Top view
SOT669 (LFPAK)
Philips Semiconductors
PH20100S
N-channel TrenchMOS™ standard level FET
40
ID
(A)
30
10 V
6V
003aaa408
VGS = 5.5 V
40
ID
(A)
30
003aaa409
20
www.DataSheet4U.com
10
5.2 V
5V
4.8 V
4.5 V
0
01234
VDS (V)
20
10
0
2
Tj = 150 °C
25 °C
3456
VGS (V)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 150 °C; VDS > ID x RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
60
RDSon
(mΩ)
50
VGS = 5 V
5.2 V
40
5.5 V
003aaa410
3
a
2
03aa31
30 6 V
7V 1
20
10 V
10
0
10 20 30 40
ID (A)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60 0 60 120 180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 13698
Product data sheet
Rev. 02 — 17 August 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6 of 12
6 Page Philips Semiconductors
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
www.DataShe4et4U.comLimiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
5.1 Transient thermal impedance . . . . . . . . . . . . . . 4
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
PH20100S
N-channel TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 17 August 2004
Document order number: 9397 750 13698
Published in The Netherlands
12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ PH20100S Schematic.PDF ] |
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