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Número de pieza | SPI80N06S2-08 | |
Descripción | OptiMOS Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SPI80N06S2-08 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO262 -3-1
SPI80N06S2-08
SPP80N06S2-08,SPB80N06S2-08
Product Summary
VDS 55 V
RDS(on)
8 mΩ
ID 80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N06S2-08
SPB80N06S2-08
SPI80N06S2-08
Package
Ordering Code
P- TO220 -3-1 Q67060-S4283
P- TO263 -3-2 Q67060-S4284
P- TO262 -3-1 Q67060-S7430
Marking
2N0608
2N0608
2N0608
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=44V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
450
21.5
6
±20
215
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09
1 page www.DataSheet4U.com
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
190
SPP80N06S2-08
Ptot = 215W
A
i
160
140
120
100
80
60
VGS [V]
a 4.5
b 4.8
c 5.0
d 5.2
e 5.5
h f 5.8
g 6.0
h 6.5
i 10.0
g
f
40 e
d
20
c
b
0a
0 0.5 1 1.5 2 2.5 3 3.5 4 V
5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
160
A
SPI80N06S2-08
SPP80N06S2-08,SPB80N06S2-08
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
26 SPP80N06S2-08
mΩ d e
f
g
h
22
20
18
16
14
12
10
8
6
4
VGS [V] =
2
de f
5.2 5.5 5.8
g hi
6.0 6.5 10.0
0
0 20 40 60
80
i
100 A 130
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
80
S
120
100
80
60
40
20
0
0 1 2 3 4 5V 7
VGS
Page 5
60
50
40
30
20
10
0
0 20 40 60 80 A 110
ID
2003-05-09
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SPI80N06S2-08.PDF ] |
Número de pieza | Descripción | Fabricantes |
SPI80N06S2-07 | OptiMOS Power-Transistor | Infineon Technologies |
SPI80N06S2-07 | Power-Transistor | Infineon Technologies |
SPI80N06S2-08 | OptiMOS Power-Transistor | Infineon Technologies |
SPI80N06S2-08 | Power-Transistor | Infineon Technologies |
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