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Teilenummer | SPI47N10 |
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Beschreibung | SIPMOS Power-Transistor | |
Hersteller | Infineon Technologies | |
Logo | ||
Gesamt 8 Seiten Preliminary data
SPI47N10
SPP47N10,SPB47N10
SIPMOS=Power-Transistor
Feature
N-Channel
Enhancement mode
175°C operating temperature
www.DataSheet4UA.cvoamlanche rated
P-TO262-3-1
dv/dt rated
Product Summary
VDS 100 V
RDS(on) 33 m
ID 47 A
P-TO263-3-2
P-TO220-3-1
Type
SPP47N10
SPB47N10
SPI47N10
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67040-S4183
Q67040-S4173
tbd
Marking
47N10
47N10
47N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC=25°C
TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=47 A , VDD=25V, RGS=25
Avalanche energy, periodic limited by Tjmax
ID puls
EAS
EAR
Reverse diode dv/dt
dv/dt
IS=47A, VDS=0V, di/dt=200A/µs
Gate source voltage
VGS
Power dissipation
TC=25°C
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Page 1
Value
47
33
188
Unit
A
400 mJ
17.5
6
kV/µs
±20 V
175 W
-55... +175
55/175/56
°C
2001-08-24
Preliminary data
SPI47N10
SPP47N10,SPB47N10
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 33 A, VGS = 10 V
130 SPP47N10
m
110
www.DataSheet4U.com
100
90
80
70
60
50
40 98%
30 typ
20
10
0-60 -20 20 60 100
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
10 4
140 °C 200
Tj
10 Gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS, ID = 2 mA
5
V
4.4
4
3.6
3.2
2.8 max
2.4
2 typ
1.6
1.2
min
0.8
0.4
0-60 -20 20 60 100 140 V 200
Tj
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
10 3 SPP47N10
A
pF
Ciss
10 2
10 3
Coss
Crss
10 2
0
5 10 15 20 25 30 V 40
VDS
Page 6
10 1
10 0
0
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
0.4 0.8 1.2 1.6
2 2.4 V 3
VSD
2001-08-24
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ SPI47N10 Schematic.PDF ] |
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