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Teilenummer | SPI42N03S2L-13 |
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Beschreibung | OptiMOS Power-Transistor | |
Hersteller | Infineon Technologies | |
Logo | ||
Gesamt 10 Seiten OptiMOS® Power-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
www.DataSheet4•UE.cxocmellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
P-TO262-3-1
• Avalanche rated
• dv /dt rated
SPI42N03S2L-13
SPP42N03S2L-13 SPB42N03S2L-13
Product Summary
V DS
R DS(on),max
ID
30 V
12.9 mΩ
42 A
P-TO263-3-2
P-TO220-3-1
Type
SPP42N03S2L-13
SPB42N03S2L-13
SPI42N03S2L-13
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67042-S4034
Q67042-S4035
Q67042-S4104
Marking
2N03L13
2N03L13
2N03L13
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
I D T C=25 °C
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C
Avalanche energy, single pulse
Repetitive avalanche energy
E AS
E AR
I D=42 A, R GS=25 Ω
limited by T jmax 2)
Reverse diode dv /dt
dv /dt
I D=42 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
42
42
248
110
8
6
±20
83
-55 ... 175
55/175/56
Unit
A
mJ
mJ
kV/µs
V
W
°C
Rev. 2.0
page 1
2004-06-04
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=21 A; V GS=10 V
30
SPI42N03S2L-13
SPP42N03S2L-13 SPB42N03S2L-13
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
2.5
25
www.DataSheet4U.com
20
15
10
5
98 %
typ
2
800 µA
1.5
37 µA
1
0.5
0
-60 -20 20
60 100 140 180
T j [°C]
0
-60 -20 20 60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
10010004
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
1000
25°C 98%
1010003
Ciss
Coss
100
175 °C
25 °C
175°C 98%
Crss
110002
10
10
0
5 10 15 20 25 30
V DS [V]
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V SD [V]
Rev. 2.0
page 6
2004-06-04
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ SPI42N03S2L-13 Schematic.PDF ] |
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